NONDESTRUCTIVE READOUT (NDRO) FROM THIN MAGNETIC FILMS.
NAVAL AIR DEVELOPMENT CENTER JOHNSVILLE PA AERO-ELECTRONIC TECHNOLOGY DEPT
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Five solid state phenomena were considered for possible use in nondestructive readout NDRO from thin magnetic film memories. The phenomenon of magnetoresistance in magnetic films was chosen as the most promising, and studies were made of this effect. Experimental studies of the switching characteristics of configurations involving magnetic films and other devices, such as tunnel diodes, were also made. Several experimental NDRO random access memories were built to demonstrate the feasibility of using magnetoresistance. The advantages of these memories were low drive currents and good sn ratio. A new technique for an associative memory was conceived, and an experimental model was built to demonstrate feasibility. Author
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