INVESTIGATION OF TWO-CARRIER INJECTION ELECTROLUMINESCENCE.
Final rept., 15 Sep 63-14 Sep 66,
RCA LABS PRINCETON N J
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The following advances were made toward a practical II-VI solid-state light source Preparation procedures of starting material and growth techniques for II-VI crystals and epitaxial films from melt, solution and vapor, were improved. Highly p-type ZnSe films were prepared. The melting point - composition diagrams of ZnTe and ZnSe were established and the first n-type ZnTe crystals prepared. New types of electroluminescent junctions were found such as the physical inversion layer and the ZnSe-ZnTe quasihomo-junction. The luminescence due to rare-earth ions in ZnSe and ZnSexTe1-x crystals was studied. The change of luminescence in ZnSxSe1-x mixed crystals was explained in a theory that is generally applicable to the luminescence of mixed crystals. A partial understanding of the phenomenon of self-compensation was gained and new approaches to fight it were devised. The general concept of II-VI electroluminescence was clarified and the problems defined. Author
- Solid State Physics