Accession Number:

AD0646914

Title:

METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN DIGITAL CIRCUITS.

Descriptive Note:

Technical memo.,

Corporate Author:

JOHNS HOPKINS UNIV SILVER SPRING MD APPLIED PHYSICS LAB

Personal Author(s):

Report Date:

1966-12-01

Pagination or Media Count:

112.0

Abstract:

The metal-oxide-semiconductor field-effect transistor Mos Fet is evaluated for use in digital circuitry. The basic building block, the digital inverter, is described and analyzed for four types of loading. The loads considered are resistor load, enhancement mode MOS Fet load, depletion mode MOS Fet load, and complementary MOS Fet Load. Characteristics such as load line characteristics, power dissipation, transfer characteristics, and transient performance are discussed and compared. Equations describing the characteristics of each circuit have been derived and verified experimentally. The results clearly indicate the superior electrical characteristics of the complementary circuits. A typical complementary MOS Flip-Flop capable of one MHz operation is illustrated. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE