Accession Number:

AD0646445

Title:

AN INVESTIGATION OF THE INTERFACE STATES OF THE GERMANIUM-SILICON ALLOYED HETEROJUNCTION.

Descriptive Note:

Final rept.,

Corporate Author:

PURDUE UNIV LAFAYETTE IND SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1967-01-01

Pagination or Media Count:

111.0

Abstract:

The alloyed germanium-silicon heterojunction interface is studied to more conclusively determine if interface states exist due to dislocations, or if an impurity contamination exists at the interface. A profile of the mixing of he the silicon and germanium is determined for the alloyed heterojunction by employing an electron microprobe for a spectrochemical analysis. The mixing is shown to be diffusion controlled. In n-n type heterojunctions, a p-type layer is observed to form at the interface. Hall coefficient, conductivity and capacitance measurements are made on this p-layer using the p-n junctions to the bulk regions for isolation. From the electrical measurements and the electron-microprobe analysis, there is very strong evidence to show the interface states to be caused by dislocations. These measurements rule out the two sources of impurities as a cause of the interface states and show direct evidence of dislocations causing the interface states. It can therefore be concluded that the source of interface states in the alloyed germanium-silicon heterojunction is dislocations rather than impurities. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE