SOLID STATE SCATTERING THEORY FOR LOCALIZED DEFECTS.
Final rept., Oct 65-Oct 66,
PHILCO-FORD CORP NEWPORT BEACH CALIF AERONUTRONIC DIV
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Solid state scattering theory for localized defects has been developed in a manner applicable to a wide variety of defects. The group theoretic properties of Bloch functions and Wannier functions have been developed and have proven useful as a means of greatly reducing the complexity of the defect problem. Several points of principle concerning the Wannier functions have been resolved. The method and techniques which have been developed are applied to the case of neutral vacancy in silicon. It is found that the vacancy produces a localized state in which low lying energy bands - in particular the lowest two valence bands - and interband couplings, are important. This is in contrast to the results for the shallow acceptors and donors which have been studied in the past. The energy for the bound state of the neutral silicon vacancy is obtained and found to be in moderate agreement with experiment. The general method which is developed appears to be the most powerful approach presently available for the investigation of the properties of localized defects. Author
- Solid State Physics