Accession Number:

AD0645750

Title:

TECHNIQUE FOR FABRICATION OF AL-AL2O3-PB SUPERCONDUCTING TUNNEL DIODES.

Descriptive Note:

Instrumentation papers,

Corporate Author:

AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s):

Report Date:

1966-11-01

Pagination or Media Count:

16.0

Abstract:

The report describes an improved method of growing Al - Al2O3 - Pb superconducting tunnel diodes. Since the resistance of the diode is dependent upon the thickness of the oxide layer, this layer must be carefully controlled in order to fabricate diodes of the desired resistance in a reproducible manner. The key to this method is a substrate holder which allows the entire process to be completed under vacuum. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE