TECHNIQUE FOR FABRICATION OF AL-AL2O3-PB SUPERCONDUCTING TUNNEL DIODES.
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
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The report describes an improved method of growing Al - Al2O3 - Pb superconducting tunnel diodes. Since the resistance of the diode is dependent upon the thickness of the oxide layer, this layer must be carefully controlled in order to fabricate diodes of the desired resistance in a reproducible manner. The key to this method is a substrate holder which allows the entire process to be completed under vacuum. Author
- Electrical and Electronic Equipment
- Fabrication Metallurgy