Accession Number:

AD0645746

Title:

A HIGH FREQUENCY SEMICONDUCTOR INSTABILITY DUE TO AMBIPOLAR DIFFUSION,

Descriptive Note:

Corporate Author:

ROYAL INST OF TECH STOCKHOLM (SWEDEN) MICROWAVE DEPT

Personal Author(s):

Report Date:

1966-11-08

Pagination or Media Count:

10.0

Abstract:

A new high frequency semiconductor instability is proposed. The instability arises when a sufficiently strong d. c. electron field is applied to a semiconductor which has a high conductivity and contain both electrons and holes. The d. c. field must elevate the effective electron temperature to about three times the background lattice temperature. The instability is caused by the temperature dependence of the ambipolar diffusion coefficient. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE