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Accession Number:
AD0645047
Title:
INTEGRATED CIRCUITS FOR PORTABLE RADAR EQUIPMENT.
Descriptive Note:
Quarterly rept. no. 2, 1 Jun-31 Aug 66,
Corporate Author:
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
Report Date:
1966-12-01
Pagination or Media Count:
43.0
Abstract:
Experimental results, and a theoretical description for vapor etching GaAs with HCl in H2 and H2 AsH3 gas mixtures, are presented. Optical microscopy and surface profile studies of various surfaces have been performed to relate the initial substrate surface to the resulting germanium growth surface. These surface studies were made for selective and non-selective etch and deposition processes. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE