INTEGRATED CIRCUITS FOR PORTABLE RADAR EQUIPMENT.
Quarterly rept. no. 2, 1 Jun-31 Aug 66,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
Pagination or Media Count:
Experimental results, and a theoretical description for vapor etching GaAs with HCl in H2 and H2 AsH3 gas mixtures, are presented. Optical microscopy and surface profile studies of various surfaces have been performed to relate the initial substrate surface to the resulting germanium growth surface. These surface studies were made for selective and non-selective etch and deposition processes. Author
- Electrical and Electronic Equipment
- Solid State Physics