Accession Number:

AD0645047

Title:

INTEGRATED CIRCUITS FOR PORTABLE RADAR EQUIPMENT.

Descriptive Note:

Quarterly rept. no. 2, 1 Jun-31 Aug 66,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s):

• Teague,E. Clayton

Report Date:

1966-12-01

Pagination or Media Count:

43.0

Abstract:

Experimental results, and a theoretical description for vapor etching GaAs with HCl in H2 and H2 AsH3 gas mixtures, are presented. Optical microscopy and surface profile studies of various surfaces have been performed to relate the initial substrate surface to the resulting germanium growth surface. These surface studies were made for selective and non-selective etch and deposition processes. Author

Descriptors:

• (*INTEGRATED CIRCUITS
• *RADAR EQUIPMENT)
• PORTABLE EQUIPMENT
• GALLIUM ARSENIDES
• ETCHING
• VAPOR PLATING
• EPITAXIAL GROWTH
• GERMANIUM COMPOUNDS
• CHLORIDES

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE