SOME PHENOMENA OCCURRING IN THERMALLY-GROWN SILICON DIOXIDE.
ROYAL AIRCRAFT ESTABLISHMENT FARNBOROUGH (ENGLAND)
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The report is a short review of recent papers relating to the effects which take place in the passivating oxide of silicon devices as a result of the application of bias and elevated temperatures. The various theories which have been put forward in explanation are outlined and their limitations discussed. It is obvious that a large proportion of the experimental discrepancies between different laboratories results is due to differences in the details of the oxidation methods used, and to impurities introduced in subsequent processing. Author
- Physical Chemistry
- Solid State Physics