Accession Number:

AD0644891

Title:

SOME PHENOMENA OCCURRING IN THERMALLY-GROWN SILICON DIOXIDE.

Descriptive Note:

Technical rept.,

Corporate Author:

ROYAL AIRCRAFT ESTABLISHMENT FARNBOROUGH (ENGLAND)

Personal Author(s):

Report Date:

1966-07-01

Pagination or Media Count:

37.0

Abstract:

The report is a short review of recent papers relating to the effects which take place in the passivating oxide of silicon devices as a result of the application of bias and elevated temperatures. The various theories which have been put forward in explanation are outlined and their limitations discussed. It is obvious that a large proportion of the experimental discrepancies between different laboratories results is due to differences in the details of the oxidation methods used, and to impurities introduced in subsequent processing. Author

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE