TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS
Final rept. no. 4, 1 Oct 1965-30 Sep 1966
RENSSELAER POLYTECHNIC INST TROY NY
Pagination or Media Count:
The transient behavior of the resistivity and Hall effect voltage in 1 to 100 ohm-cm n- and p-type silicon was studied both during and after exposing the sample to short bursts 0.01 to 4.5 microsec of 48 MeV electrons. The buildup of excess electrons produced by ionization during the time the electron pulse is irradiating the sample appears to be dependent on the normal excess carrier decay rate. The injection levels induced by the bombarding electrons are high delta nn110 and in most cases the excess carrier lifetimes exhibit an increase with higher injection level. The temperature dependence of induced conductivity as a function of injection is consistent with that predicted by theory. The transient Hall voltage response of 100 ohm-cm p-type silicon for high injection levels can be approximately reproduced by calculation assuming mixed hole-electron conduction and equal hole and electron decay times by a single time dependent exponential. A simple model is given which describes fast annealing in 45-50 MeV electron-irradiated silicon.
- Solid State Physics