Accession Number:

AD0643652

Title:

STUDY FOR GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.

Descriptive Note:

Quarterly progress rept. no. 6, 15 Jun-14 Sep 66,

Corporate Author:

NORTRONICS NEWBURY PARK CALIF

Personal Author(s):

Report Date:

1966-12-01

Pagination or Media Count:

100.0

Abstract:

The saturation-inclusive bipolar transistor representation has been refined and written into a computer code to allow detailed comparison of analytical and experimental results. Electrical and radiation-induced saturated switching responses have been calculated from electrical parameter measurements. The agreement between calculated and experimental results is good. The lumped-model analysis of the monolithic circuit elements has been extended to the detailed qualitative characteristics of junction-isolated and dielectrically-isolated resistor and transistor elements. Comparison is made between the results of the lumped-model analysis and known solutions of the differential equation representation of the devices. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE