Accession Number:

AD0643640

Title:

EFFECT OF A COPPER ADMIXTURE ON ELECTRICAL PROPERTIES OF INSB,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date:

1966-12-08

Pagination or Media Count:

8.0

Abstract:

Some results of electrical properties of p-InSb crystals, obtained by the diffusion of copper into n-type crystals, are given. A table is given of concentration values N and mobility U of current carrying samples at 78K before and after diffusion annealing. It is shown on the table that samples with electron concentrations of 2--4.10 to the 13th powercu cm change the type of conductivity at a temperature of 260C, and in samples with electron concentrations of 8.10 to the 13th powercu cm the change in conductivity type takes place at a temperature of 300C. It is pointed out that investigations have shown that annealing of samples in a vacuum and in an argon atmosphere gives the same result. Samples of p-type with a low concentration of holes and sufficiently high mobility can be obtained by the diffusion of copper into n-InSb. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE