Accession Number:

AD0643610

Title:

INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME XII. MEASUREMENT TECHNIQUES.

Descriptive Note:

Technical documentary rept.,

Corporate Author:

RESEARCH TRIANGLE INST DURHAM N C

Personal Author(s):

Report Date:

1966-09-01

Pagination or Media Count:

244.0

Abstract:

Methods for determining the most common physicalelectrical properties of silicon or devices made from silicon are described in this report. These measuring methods are grouped under four general headings starting material evaluation, process parameter evaluation, device electrical evaluation, and device thermal evaluation. ASTM and other published standards are cited where applicable. For certain measurements these referenced standards are the only methods given for others, alternative methods are also described in detail and for still other measurements, no adequate standards exist. In the latter case the procedures given here have been developed from what seems to be common practice and sense. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE