MODULATOR PERFORMANCE OF ONE-KILOVOLT THYRISTORS.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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Two solid state thyristors have been developed for fast switching applications. One is a gate activated switch rated at 1000 V maximum anode voltage and 100 A peak anode current the other is a two-terminal four layer switch of the same ratings for use in series with the gate activated switch as a slave switch. Performance of the gated switch was measured for different pulse widths, amplitudes, pulse repetition rates, and circuit impedances. In these tests the pulse width was varied from 0.1 to 1.0 microsecond, the circuit impedance from 10 to 50 ohms, and the pulse repetition rate from 1000 to 10,000 pps. Measurements were made of current rise time, fall of anode potential, maximum operating voltage, and dissipation as a function of operating parameters. Some tests were also conducted on series operation of the two-terminal device with the gated thyristor. The design of the devices and their pertinent characteristics are discussed in relation to their performance in modulator circuits. Author
- Electrical and Electronic Equipment