Accession Number:

AD0642582

Title:

SILICON DIODE FAST NEUTRON DOSIMETER, PHASE III, REVERSE-RECOVERY LIFETIME AS A FUNCTION OF TEMPERATURE,

Descriptive Note:

Corporate Author:

PHYLATRON CORP COLUMBUS OHIO

Report Date:

1966-11-01

Pagination or Media Count:

27.0

Abstract:

P-i-n wide-base diodes were made from n- and p-type, float-zone silicon. The diodes were irradiated with fast neutrons and annealed at 58C, 100C, 150C, and 200C for 175 hours at each step. Reverse-recovery lifetime as a function of temperature was taken before and after irradiation and after each anneal. The temperature dependence of the lifetime indicated very shallow levels which are not in agreement with the existing literature. Author

Subject Categories:

  • Nuclear Instrumentation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE