Accession Number:

AD0642514

Title:

EFFECTS OF PRESSURE ON A SEMICONDUCTOR LASER RADIATION.

Descriptive Note:

Technical rept.,

Corporate Author:

MASSACHUSETTS INST OF TECH CAMBRIDGE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1966-09-19

Pagination or Media Count:

146.0

Abstract:

The results of the relativistic APW calculation of the band structure, momentum matrix elements and deformation potentials of the lead salts are used to calculate the effects of constant pressure on lasers made of these materials. Behavior of the frequency, polarization and relative gain of these lasers are calculated for several dopings, and injection levels, when isotropic and uniaxial pressures are applied. The effect of small dynamic pressure on semiconductor lasers is analyzed, resulting in a frequency modulation of the laser radiation. An experiment confirming this analysis was performed. A 2 Mcs frequency modulation was introduced into a cw GaAs injection laser with an ultrasonic wave. This modulation was then detected with the use of a Fabry-Perot interferometer. A theoretical analysis of the limitations of the method of modulation demonstrated above was carried out with a regard to its device applications. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE