Accession Number:

AD0642342

Title:

JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS,

Descriptive Note:

Corporate Author:

ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING

Report Date:

1966-06-01

Pagination or Media Count:

12.0

Abstract:

The effect of the considerable depth of donor impurity states near the indirect 100 conduction band minima on the direct-indirect transition in GaAsP is discussed. A simple technique for using a GaAsP laser to operate a CdSe laser is described. The current understanding of the p-i-n deep-level oscillator is mentioned. Author

Subject Categories:

  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE