Accession Number:

AD0642301

Title:

RADIATION EFFECTS ON (MONOLITHIC) MICROELECTRONIC CIRCUITS.

Descriptive Note:

Rept. no. 5, 1 May 65-31 Jul 66 (Final),

Corporate Author:

HUGHES AIRCRAFT CO FULLERTON CALIF

Report Date:

1966-11-01

Pagination or Media Count:

90.0

Abstract:

Evaluation of commercial circuits reveals that the better constructed circuits are immune to transient radiation disturbances up to 110 to the 9th power rads Sisec and to permanent damage up to at least 10 to the 13th power N sub fvt. Analysis shows that the transient effects originate in the junctions with the substrate. Theoretical expressions are derived for the critical radiation thresholds. On the basis of this analysis, guidelines are set down for the design of monolithic circuits resistant to transient radiation effects. Analysis shows that permanent damage is due to degradation of transistor current gain. Theoretical expressions are derived for the critical radiation thresholds for permanent damage. On the basis of this analysis, guidelines are set down for the design of radiation-hardened monolithic circuits. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE