FAILURE MECHANISMS IN RESISTORS.
Final rept. 3 Feb 65-3 Jan 66,
IIT RESEARCH INST CHICAGO ILL
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The accomplishments in the study of the failure mechanisms in metal thin film resistors is presented. The films studied were of the same type employed by several of the major manufacturers of thin film resistive networks. Experiments were carried out to identify the principal physical mechanisms contributing to the degradation of these devices. Chief among these were homogenization of the film composition, stress relief, and ion migration. A computer analysis of manufacturers test data was carried out to determine the nature of the behavior function. The computer was also used to derive from experimental data, an empirical expression for the test resistors as a function of environment, deposition parameters, and time. As a part of this program, the Fourth Annual Physics of Failure in Electronics Symposium was conducted. An evaluation of the symposium is presented. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems