EFFECT OF TRANSISTOR DESIGN PARAMETERS ON RADIATION RESPONSE (POWER TRANSISTORS).
Rept. no. 4, 1 Jul 65-30 Jun 66 (Final),
HUGHES AIRCRAFT CO FULLERTON CALIF
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An investigation of design effects on the radiation resistance of a silicon planar power transistor is presented. This research was a joint theoretical and experimental study of methods to modify existing fabrication techniques to produce a power transistor which would minimize the deleterious effects of transient ionizing and displacement producing radiation. The theoretical model was developed by combining a one dimensional base transport equation with the appropriate corrections for high level injection effects. The resulting radiation design equation expresses the radiation resistance of the transistor in terms of the fundamental design parameters which were studied experimentally. The critical physical design parameters were varied in a statistically designed experiment to determine the optimum combination of processing techniques which would maximize the radiation resistance while preserving the useful electrical characteristics of the device. On the basis of these results, the optimum design parameters and processing techniques were combined to evaluate a prototype radiation resistant transistor. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products