PRODUCTION ENGINEERING MEASURE FOR INSULATED GATE FIELD EFFECT TRANSISTORS.
Quarterly progress rept. no. 2, 1 Mar-31 May 66,
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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The work centered mainly in four areas two new photolithographic mask sets were devised to insure the necessary geometrical variations were investigated. These new sets will enable both epitaxial and nonepitaxial techniques to be more fully developed stable processing steps were formulated with results shown on capacitance-voltage plots advanced devices were fabricated using information obtained from the initial production group reliability information was compiled and certain conclusions were drawn. Author
- Electrical and Electronic Equipment
- Fabrication Metallurgy