Accession Number:

AD0641400

Title:

INJECTION CAUSED P-N JUNCTION IN CDS.

Descriptive Note:

Technical rept.,

Corporate Author:

DELAWARE UNIV NEWARK DEPT OF PHYSICS

Personal Author(s):

• Boer,K. W.
• Ward,J. J.

Report Date:

1966-10-01

Pagination or Media Count:

25.0

Abstract:

It is observed using the Franz-Keldysh effect that certain very pure CdS crystals show a high field layer close to, but well separated from, a hole injecting anode Au. This layer is identified as a p-n junction caused by hole injection. Inversion of a IR quenching spectrum into a similar IR excitation spectrum is observed at an applied voltage where this high field layer becomes visible, and explained as caused by a current controlling p-type region in CdS. Author

Descriptors:

• *CADMIUM COMPOUNDS
• SULFIDES
• CHARGE CARRIERS
• PHOTOCONDUCTIVITY
• INFRARED RADIATION
• VOLTAGE

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE