A DISTORTION ANALYSIS OF THE MOS TRANSISTOR.
ILLINOIS UNIV URBANA DEPT OF ELECTRICAL ENGINEERING
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The experimental results verify the theoretical expressions considerably well when the equations are evaluated within their respective regions of validity. The deviation from the V sub G dependance of i sub d1 which is seen to extend into the saturation region by an amount greater than the modulation width of the input signal is assumed to be due to the approximation of zero drain conductance at the edge of the saturation region. The practical results of this experiment indicate that the MOS transistor can perform satisfactorily as a low distortion amplifier when operated in the saturation mode provided that the input signal is maintained at a sufficiently low level. The properties of the square law behavior for the saturation mode can be used most advantageously in the construction of an analog squaring circuit. For this application, the test circuit of Figure 5 can be used if an additional notch filter is inserted in the output circuit to remove the fundamental frequency of the output signal. The output signal can then be conveniently measured with an rms a-c voltmeter and will vary as the square of the input signal. Author
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