Accession Number:

AD0641164

Title:

RADIATION EFFECTS ON INSULATED GATE FIELD EFFECT (MOS) INTEGRATED CIRCUITS.

Descriptive Note:

Quarterly rept. no. 4, 1 Apr-30 Jun 66,

Corporate Author:

MARTIN CO BALTIMORE MD

Personal Author(s):

• LONG,David M.

Report Date:

1966-10-01

Pagination or Media Count:

90.0

Abstract:

The report covers the fourth quarters effort of a program to determine the mechanism and extent of the transient and permanent effects of nuclear radiation on insulated gate field effect MOS integrated circuits. The report discusses the results of the past years investigation of transient response phenomena in custom-built and commercial MOS transistors and commercial MOS integrated circuits. The primary conclusions from the study are indicated below. The transient gate current produced in MOS transistors by a pulse of ionizing radiation is composed of two major components 1 current leakage from the gate lead to the package through the ionized encapsulated gas, and 2 photovoltaic displacement current resulting from the motion of induced carriers in the tranverse electric field beneathe the gate oxide. Both mechanisms produce larger response for n-depletion transistors than for p-enhancement transistors. Mechansims of generally lesser imprtance are photocurrents of protective gate diodes, gate-drain interaction leakage currents, and variations in gate current due to irradiation history. Charge scattering from the device leads is small, and ionization induced leakage through the gate oxide is negligible. Author

Descriptors:

• *INTEGRATED CIRCUITS
• *DAMAGE
• METALS
• OXIDES
• SEMICONDUCTORS
• TRANSISTORS
• MICROELECTRONICS
• IONIZATION
• LEAKAGE(ELECTRICAL)
• ELECTRIC CURRENT
• ELECTRIC CURRENT

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE