PRODUCTION ENGINEERING MEASURE FOR SILICON NPN SWITCHING TRANSISTORS.
Quarterly progress rept. no. 4, 25 Feb-25 May 66,
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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Areas of progress during the quarter were as follows 1 Incoming material specification change to substrate resistivity of 0.01 to 0.02 ohmcm and breakdown voltage range of 80 to 100 volts has been approved and specifications issued. 2 New diffusion experiments to test narrower basewidths have been initiated. 3 Evaluation probe limits were adjusted and specifications issued. 4 New 10-mil-mask evaluation has been initiated. 5 A new Motorola photoresist is now under evaluation. 6 The cause of stress failures in environmental testing has been determined and appropriate measures were initiated to eliminate the failure mode. 7 Metallization amounts have been standardized and specifications issued. 8 A new cascade rinse facility is now in production use. Author
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