INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.
Quarterly progress rept. no. 3, 1 Apr-30 Jun 66,
RENSSELAER POLYTECHNIC INST TROY N Y
Pagination or Media Count:
The transient behavior of the resistivity and Hall effect voltage in 1 to 100 ohm-cm n-type silicon and in 100 ohm-cm p-type silicon has been studied following short bursts or 4.5 microseconds of 48 MeV electrons. The irradiations were performed with the sample temperatures in the 120-300 K range. The excess carrier lifetime is also determined by measuring the time decay of the resistivity voltage. The single dominant process which occurs is the production of excess carriers from ionization of atomic electrons, and their subsequent decay by recombination. The injection levels induced by the bombarding electrons are high Delta nn 0.1 and in all cases the excess carrier lifetimes exhibit an increase with higher injection level. The number of excess carriers generated can be calculated within a factor of 2 from a knowledge of the ionization energy loss, the energy to form an ion pair, and the total integrated electron flux. The temperature dependence of induced conductivity as a function of injection is consistent with that predicted by theory. The transient Hall voltage response of 100 ohm-cm p-type silicon can be approximately reproduced by calculation assuming mixed hole-electron conduction and equal hole and electron decay times by a single time dependent exponential. A simple model to describe fast annealing in electron-irradiated silicon is given. Author
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics