STUDY FOR GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.
Quarterly rept. no. 5, 15 Feb-15 Jun 66,
NORTRONICS NEWBURY PARK CALIF APPLIED RESEARCH DEPT
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The detailed bipolar transistor model has been extended to the general large-singal electrical and radiation-induced switching responses. Circulations have been made on the delay, rise, storage, and fall times resulting from electrical or radiation-induced common-emitter response. The radiation-induced transient response has been measured over the range of 0.3 to 100 rads Si in a nominal 0.2 microsecs pulsed radiation environment. Radiation environments were the Nortronics 600-kv Flash x-ray and 10-Mev electron irradiation from the General Atomic LINAC. A brief comparison is made between measured and calculated electrical and radiation-induced responses. The lumped-model analysis has been extended to the circuit elements of junction- and dielectrically isolated integrated circuits. Considered are the resistor, diode, and transistor bipolar elements and the metal-oxide-semiconductor transistor. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics