PRODUCTION ENGINEERING MEASURE FOR SILICON NPN SWITCHING TRANSISTORS.
Quarterly progress rept. no. 3, 25 Nov 65-25 Feb 66,
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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Areas of progress during the quarter were as follows 1 Evaluation of decreased substrate resistivity initiated. 2 Evaluation of increased breakdown voltage range initiated. 3 Tests of increased diffusion source time completed. 4 Evaluation probe measurements reviewed and standardized. 5 New emulsion developer installed. 6 Evaluation of photoresist coating thickness versus spin velocity completed. 7 Refined oxide etching techniques. 8 Preliminary evaluation of centrifuged KMER completed. 9 Investigation of metallization thicknesses versus pattern definition initiated. 10 Evaluation of experimental header capacitances completed. 11 All testing completed on Engineering Sample No. 1 units. 12 Engineering Sample No. 2 units delivered to the customer. Author
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