HIGH PERFORMANCE THIN FILMS FOR MICROCIRCUITS.
Quarterly progress rept. no. 5, 1 Mar-31 May 66,
RADIO CORP OF AMERICA SOMERVILLE N J DEFENSE MICROELECTRONICS
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Insulating layers of hafnium dioxide were deposited onto P-type silicon wafers. N regions were diffused into the silicon wafer to act as bottom electrodes of capacitors or as source and drain electrodes of MOS field-effect devices. These FETs, containing ANODICALLY-formed oxide layers as channel insulators AMOS, exhibited good transfer characteristics. The results of experiments proved that silicon IC technology can successfully be combined with thin-film hafnium technology, whereby only a limited number of processing steps are required to produce the necessary electrod inside the silicon wafer. The remaining parts of the active devices and all the passive components can be fabricated by the thin-film hafnium technology on the surface of the silicon substrate. Investigations of the leakage current of the anodic oxide films showed that the insulation resistance of thin-film Hf-HfO2 capacitors was similar to that of other thin-film valve metal oxide capacitors in anodic direction, and superior in the cathodic direction. Author
- Electrical and Electronic Equipment