PRODUCTION ENGINEERING MEASURE FOR THE PRODUCTION OF SILICON MONOXIDE CAPACITORS MICROELEMENT.
Final rept., 29 May 63-29 Jul 66.
CORNELL-DUBILIER ELECTRONICS DIV FEDERAL PACIFIC ELECTRIC CO NORWOOD MASS
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A pilot production process for fabricating SiO microelement capacitors at a rate of 2,000 per eight-hour shift was demonstrated and the products therefrom tested and shown to pass the required specifications. Each microelement 0.310 in. square contains 1, 2, 3, or 4 capacitors with values of 1120 and 560, 180, 100, and 68 pf per capacitor, respectively. In addition to the general requirements of microelements and micromodules, some of the more important specifications are dissipation factor DF or 1.5, dielectric withstanding voltage 150 volts, insulation resistance IR 1000 megohms at 50 volts and 25 C and 75 megohms at 125 C, Delta CC or 15 -55 to 125 C, and a long term life test of 2000 hours at 125 C and 100 volts after which DF or 3 and IR 25 C 200 megohms for 560 pf and 750 megohms for 180, 100 and 68 pf units and IR 125 C 20 megohms for 500 pf and 50 megohms for other capacitance values. The capacitors are vacuum deposited in a multi-station jig using as heated evaporation sources. The alumina ceramic substrates were metalized with Au-Pt at the peripheral terminations and the interior area was glazed, using a fritted-glass tape. The aluminum electrodes are about 5000 A thick and the SiO dielectric is about 16,000 A thick. Deposition rates are about 50 Asec. Rates and film thicknesses are monitored and controlled. Vacuum chamber pressure is 1 to 4 x 10 to the minus 5th power torr. Substrate temperature is 170 C during depositions. Yields of about 90 were achieved. Author
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