GROWTH AND CHARACTERIZATION OF BETA-SILICON CARBIDE SINGLE CRYSTALS.
STANFORD RESEARCH INST MENLO PARK CALIF
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Large single-crystal Beta-silicon carbide dendrites were grown in experiments in which convection stirring was reduced by crucible geometry and shielding. Addition of trace amounts of tantalum to the silicon melt improved the surface quality of crystals grown under conditions that normally favor the growth of coarse dendrites. Small untwinned single-crystal polyhedrons of Beta-silicon carbide were grown in melts stirred with a high velocity impeller. A theoretical treatment of silicon carbide solution growth was made in an attempt to more adequately define growth mechanisms and controlling parameters. Preliminary photovoltaic measurements indicate the absence of any large inhomogeneities in Beta-silicon carbide laths and plates. Hall measurements were made over the temperature range from 77-300K, and a high temperature furnace was constructed to extend measurements to high temperatures. Author
- Solid State Physics