ELECTRON-SPIN-RESONANCE IN FAST-NEUTRON-IRRADIATED PHOSPHORUS-DOPED SILICON.
ARMY NUCLEAR DEFENSE LAB EDGEWOOD ARSENAL MD
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Damage produced in phosphorus-doped silicon by fast-neutron irradiation is being investigated. Electron-spin-resonance techniques are used to obtain information which should aid in an understanding of the nature of the lattice defects produced. Preliminary observations concerning the experimental problems involved and the techniques appropriate to their solution are presented. A discussion of the background pertinent to such an investigation is also included. Author
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics