Accession Number:

AD0637691

Title:

ANNEALING OF GAMMA-RAY INDUCED DEFECTS IN BI-DOPED GERMANIUM.

Descriptive Note:

Corporate Author:

HARRY DIAMOND LABS WASHINGTON D C

Personal Author(s):

• Tseng ,Ben
• Ausman,George , Jr

Report Date:

1966-06-01

Pagination or Media Count:

15.0

Abstract:

A preliminary study was made of the isochronal annealing of gamma-ray induced defects in bismuth-doped germanium in the temperature range 318 to 523 K. Comparison of the results with previous studies on arsenic- and antimony-doped germanium confirms that the annealing processes in gamma-irradiated n-type germanium are strongly dependent on type of donor impurity. A possible explanation is given for the differences in the annealing behavior, based on differences in the covalent sizes of the donors. Author

Descriptors:

• (*GERMANIUM
• ANNEALING)
• (*ANNEALING
• DEFECTS(MATERIALS))
• BISMUTH
• DOPING
• DAMAGE
• RADIATION EFFECTS
• SEMICONDUCTORS

Subject Categories:

• Metallurgy and Metallography
• Fabrication Metallurgy
• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE