PHENOMENA OF ELECTROLUMINESCENCE.
Final rept., 21 Feb-21 Nov 63.
HOFFMAN ELECTRONICS CORP SANTA BARBARA CALIF SCIENCE CENTER
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The investigations were undertaken in order to obtain a better understanding of injection electroluminescence, the ultimate objective being the development of more efficient and higher power sources of coherent or incoherent infrared radiation. The junctions which were studied experimentally were in gallium arsenide, this semiconductor material being chosen because the wave-length of recombination radiation is convenient and the technology of material preparation and fabrication is better developed than for most other direct gap semiconductors. A survey was made of the published literature pertinent to the study of injection electroluminescence in available semiconductors. A discussion of the principal literature available to December 1963 constitutes the first section of this report, with an extensive bibliography included as the third section. Experimental information obtained under this contract and some tentative interpretations make up the second section. Author
- Electricity and Magnetism
- Solid State Physics