HIGH SPEED SEMICONDUCTOR SWITCH (TWO TERMINAL) AND HIGH SPEED SEMICONDUCTOR SWITCH (GATE).
Quarterly rept. no. 12, 28 Feb-29 May 66.
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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The report presents the results obtained from preproduction testing of three device types, details of circuitry considerations of turn-on time measurements, results of investigation of gate-cathode impedance of the 2N1765 device type, and evaluation of 3-terminal reliability and 2-terminal dvdt problems. Preliminary investigation of producing a device with electrical characteristics similar to the 2N1765 but housed in a 716 inch stud package was performed and the results are reported. Author
- Electrical and Electronic Equipment