A METHOD OF REMOVING THE SURFACE FILM FORMED AFTER THE DIFFUSION OF BORON ON THE SURFACE OF SILICON.
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Pagination or Media Count:
In using B2O3 as an impurity source to form a P-N bond by diffusion on the surface of a N-type silicon sheet, a thin layer of a blue or dark gray film will be formed if the temperature of diffusion is too high and the time is too long. A simple electrolytic method of removing that surface film is proposed. It destroys the film formed on the surface of silicon after diffusion without corroding the silicon itself.
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