Accession Number:

AD0637067

Title:

A METHOD OF REMOVING THE SURFACE FILM FORMED AFTER THE DIFFUSION OF BORON ON THE SURFACE OF SILICON.

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• Huang,Cheng-sung

Report Date:

1966-05-09

Pagination or Media Count:

7.0

Abstract:

In using B2O3 as an impurity source to form a P-N bond by diffusion on the surface of a N-type silicon sheet, a thin layer of a blue or dark gray film will be formed if the temperature of diffusion is too high and the time is too long. A simple electrolytic method of removing that surface film is proposed. It destroys the film formed on the surface of silicon after diffusion without corroding the silicon itself.

Descriptors:

• (*SEMICONDUCTORS
• *ELECTROLYTIC POLISHING)
• (*SILICON
• ELECTROLYTIC POLISHING)
• DOPING
• BORON
• DIFFUSION
• FILMS
• ELECTROLYSIS
• MATERIALS
• REMOVAL
• CHINA

Subject Categories:

• Electrical and Electronic Equipment
• Manufacturing and Industrial Engineering and Control of Production Systems
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE