SEMICONDUCTOR HETEROJUNCTION STRUCTURE STUDIES.
Interim rept., 15 Dec 65-14 Jun 66.
CARNEGIE INST OF TECH PITTSBURGH PA DEPT OF ELECTRICAL ENGINEERING
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Research on the fabrication of a semi-insulating GaAs-Ge-Ge space charge limited triode is discussed. This includes a discussion of the close-speed gallium arsenide growth system and the metallurgical and electrical properties of the resulting growths. A method of diffusing a thin p type layer into n type germanium is discussed as well as a low temperature method of alloying contacts to gallium arsenide. The close-spaced growth of ZnSe on Ge for the study of the electrical and optical properties of the ZnSe-Ge heterojunction is described. Results of the growths and a means of making contact to ZnSe are discussed. A theoretical comparison of the optical properties of heterojunction and homojunction photocells is made and a photo-capacitive method of measuring very short lifetimes is considered for heterojunctions. Author
- Electrical and Electronic Equipment