Accession Number:

AD0636806

Title:

SEMICONDUCTOR HETEROJUNCTION STRUCTURE STUDIES.

Descriptive Note:

Interim rept., 15 Dec 65-14 Jun 66.

Corporate Author:

CARNEGIE INST OF TECH PITTSBURGH PA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1966-06-14

Pagination or Media Count:

74.0

Abstract:

Research on the fabrication of a semi-insulating GaAs-Ge-Ge space charge limited triode is discussed. This includes a discussion of the close-speed gallium arsenide growth system and the metallurgical and electrical properties of the resulting growths. A method of diffusing a thin p type layer into n type germanium is discussed as well as a low temperature method of alloying contacts to gallium arsenide. The close-spaced growth of ZnSe on Ge for the study of the electrical and optical properties of the ZnSe-Ge heterojunction is described. Results of the growths and a means of making contact to ZnSe are discussed. A theoretical comparison of the optical properties of heterojunction and homojunction photocells is made and a photo-capacitive method of measuring very short lifetimes is considered for heterojunctions. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE