Accession Number:

AD0636773

Title:

RADIATION EFFECTS ON (MONOLITHIC) MICROELECTRONIC CIRCUITS.

Descriptive Note:

Quarterly rept. no. 4, 1 Feb-30 Apr 66.

Corporate Author:

HUGHES AIRCRAFT CO FULLERTON CALIF

Report Date:

1966-07-01

Pagination or Media Count:

28.0

Abstract:

Preliminary results of the remedial action tests on transient radiation effects show no effect in varying the circuit topology or isolation region configuration, except in the air-ionization leakage effect, which is about 20 percent of the total effect. Gold doping raises the critical radiation thresholds by at most an order of magnitude in going from a concentration of 0 to 3 x 10 to the 16th power atomscc. Base-width variations have no effect. Thin-film resistors show a considerably smaller response than do diffused resistors. This could be important in those DTL ON gates which show a response presumably due to base circuit effects including possibly effects in the base circuit resistors. Permanent damage in nomolithic digital circuits is entirely predictable on the basis of known damage effects in transistors. Theoretical expressions for critical radiation thresholds are derived and yield numerical values in excellent agreement with measured values. Since these values fall well above the desired minimum of 10 to the 13th power nvt for all circuits, no remedial action for permanent damage is required under this program. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE