THE EFFECT OF AMBIENT BACKGROUND ON THE PERFORMANCE OF LEAD SULFIDE AND SILICON PHOTODETECTORS.
Research rept. for 1963-1965.
NAVY UNDERWATER SOUND LAB NEW LONDON CONN
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This report presents a summary of several years of investigation into characteristics of chemically deposited, lead sulfide, near-infrared photoconductors and broad-area, diffused junction, silicon, near-infrared photodiodes exposed to actual and simulated ambient background conditions. Among the parameters tested were voltage-current characteristics, signal and noise characteristics, and frequency response. The silicon operational techniques tested were voltage amplification, current amplification, reverse biasing, transformer coupling, and inductance coupling. It was found that 1 the lead sulfide photoconductive cell still retains its position as an important photodetector for use in low frequency, near-infrared applications, and 2 maximum performance from the diffused junction silicon photodiode is realized when the detector is operated under DC short-circuit conditions. A theoretical discussion of the operation of the two detectors is also presented. Author
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