RADIATION STUDY ON MOS STRUCTURES.
Scientific rept. no. 1, 15 Dec 65-15 May 66.
FAIRCHILD SEMICONDUCTOR DIV FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF
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Ionizing radiation causes the build-up of a positive space-charge within the oxide on an MOS structure. The location of this space-charge and the kinetics of its formation and annealing have been studied experimentally. On the basis of these experiments, a simple model has been proposed which relates this space-charge to the defect structure of the oxide and provides results in good agreement with the data. Photocurrents flowing in the oxide due to X-rays and ultraviolet light have been used in the interpretation of the experiments and have made possible the construction of detailed energy band diagrams of the MOS structure. Author
- Solid State Physics