Accession Number:

AD0636163

Title:

RADIATION STUDY ON MOS STRUCTURES.

Descriptive Note:

Scientific rept. no. 1, 15 Dec 65-15 May 66.

Corporate Author:

FAIRCHILD SEMICONDUCTOR DIV FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CALIF

Personal Author(s):

Report Date:

1966-06-01

Pagination or Media Count:

29.0

Abstract:

Ionizing radiation causes the build-up of a positive space-charge within the oxide on an MOS structure. The location of this space-charge and the kinetics of its formation and annealing have been studied experimentally. On the basis of these experiments, a simple model has been proposed which relates this space-charge to the defect structure of the oxide and provides results in good agreement with the data. Photocurrents flowing in the oxide due to X-rays and ultraviolet light have been used in the interpretation of the experiments and have made possible the construction of detailed energy band diagrams of the MOS structure. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE