THE EFFECT OF RADIATION INDUCED CHARGE ON TRANSISTOR SURFACES.
NAVAL RADIOLOGICAL DEFENSE LAB SAN FRANCISCO CALIF
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The deleterious effects of 1000 to 10,000 rads absorbed dose on transistors are analytically studied to determine the mechanisms. Several mechanisms for producing surface charge at the transistor junctions are important. The effect of the charge on the width and depth of the channel at the collector junction causes an increase of collector leakage current I sub CBO when the sign of the charge is such as to drive the surface potential toward inversion. Variations of the transistor gain are due to the variations of the surface recombination velocity, which is a function of surface potential. It is suggested that mitigation be achieved by attempting to eliminate the variations of transistor surface potential. This can be accomplished by preventing the charging of the surfaces and surrounding medium. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products