TRANSISTOR, VHF, SILICON, POWER TYPE EL-2N (X-9) 5W 500 MC PEM.
Quarterly rept. no. 3, 1 Nov 65-31 Jan 66,
TRW SEMICONDUCTORS INC LAWNDALE CALIF RESEARCH AND DEVELOPMENT DEPT
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Processing of lots continues to reduce the base width to 0.3 to 0.45 micron on a controllable basis. Sputtered metallizing has been accomplished. The glassified molded package has been modified to facilitate its use in the circuit and to simplify assembly. Interim interdigitated four and interrupted emitter six patterns were produced and evaluated for optimum performance. Only the interdigitated pattern with the largest dimensions 0.3 mil metal strips with 0.2 mil clearance was noticeably poorer than the rest. The remaining nine patterns typically produced 10 watts at 500 Mc and 28 volts, with 6.0 to 7.5 db of power gain and 60 to 70 collector efficiency. These results were used to produce a final interdigitated pattern, which has initially produced 10 watts with 7.0 to 7.5 db of power gain with 65 to 70 collector efficiency. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems