THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.
Quarterly rept. no. 4, 1 Jun 64-31 Jul 65,
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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This program is a continuation of the program initiated in 1963. Under the initial program the contractor studied the effects of thin film materials and processes used in the film technologies existing at that time. The compatibility of materials and processes with silicon integrated circuits was verified. Thin film resistive and capacitive elements were fabricated on silicon chips containing a 2N708-class silicon transistor a detailed characterization of these samples was made. The required circuits were fabricated, characterized, and delivered to the USAEL. The performance objectives of the present program was to obtain compatible thin film capacitors and resistors.
- Electrical and Electronic Equipment
- Solid State Physics