THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.
Quarterly technical progress rept. no. 5, 1 Aug-31 Oct 65,
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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During the past quarter the following was accomplished 1 Modification of the cermet-evaporation system with respect to powder feed, resistance and film rate monitoring, and electron gun orientation to obtain more uniform deposition characteristics. 2 Design of a new resistor test mask set to permit more rapid and more exact measurement of resistor films. 3 Continued investigation as to the best method of depositing aluminum for use as a thin film capacitor lower conductor either by itself or in combination with other materials such as tantalum or titanium. 4 Ordering the necessary equipment to r-f sputter dielectric films. 5 Improvement of film thickness measurement techniques using the ellipsometer and interferometer. 6 Continuation of the 1000-hour life tests on the compatibility vehicles consisting of a thin film resistor, transistor, and capacitor and 7 Acquisition and use of equipment to study methods of making high frequency measurements of thin film components. Author
- Electrical and Electronic Equipment
- Solid State Physics