Accession Number:

AD0632458

Title:

INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.

Descriptive Note:

Quarterly progress rept. no. 1, 1 Oct-31 Dec 65,

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY N Y

Report Date:

1966-05-01

Pagination or Media Count:

15.0

Abstract:

The report gives the first results of transient radiation damage experiments designed primarily to cover a wide range of electron flux about 10 to the 5th power-10 to the 10th power esq cm in the pulse. The incident electron energy was 48 MeV and the electron beam pulse widths used were in the range 1 to 4.5 micro sec. The samples studied were 100 ohm -cm floating zone silicon phosphorous and indium doped. The irradiations were carried out with the sample at 100, 200 or 300K to roughly check temperature dependence. The probes used to detect transient radiation damage are the conductivity and Hall effect voltages. The results indicate a saturation in the Hall effect and conductivity voltage pulses for electron fluxes or about 10 to the 9th power esq cm. Both the fractional Hall effect and conductivity voltages Delta VV have the same flux dependence. The main effect in transient radiation damage experiments is one of ionization and recombinations of excess electron hole pairs, and moreover transient atomic displacement damage if present is small and not detectable. Author

Subject Categories:

  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE