PRODUCTION ENGINEERING MEASURE (PEM) FOR TRANSISTOR, PNP, SILICON, SWITCHING TYPE EL-2N(X-12).
Quarterly rept. no. 3, 25 Sep-25 Dec 65,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
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The third engineering samples exhibited significant improvement in current gain performance and cutoff frequency over previous samples. Typical performance of h sub FE at VCE 0.5 V and IC 10 mA was in the 45-50 range specification minimum 30. Absolute value of h sub fe performance was greater than 20 dB in most cases. The test conditions for absolute value of h sub fe was modified from I sub C 10 mA to I sub C 2 mA, which allowed the measurement to be made near the peak operation point of the device. Units were fabricated on very thin, low resistivity epitaxial films. The material produced a V sub CEsat distribution between 0.17 and 0.20 V. Breakdowns were marginal and in many cases were governed by punch through considerations and not avalanche effects. Switching times were about the same for delay time and storage time however, the increased h sub FE and absolute value of h sub fe produced a rise time of 4.6 ns and a fall time of 4.8 ns. A large group of units were processed and the data analyzed by an IBM 1440 computer. Parameter variation curves with bias and temperature plotted from this data and furnish an accurate picture of the device capabilities. Preliminary reliability tests were conducted and indicated a problem area with storage life samples. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems