Accession Number:

AD0632006

Title:

IMPURITY DOPED PHOTOCONDUCTORS.

Descriptive Note:

Final rept. 1 May-31 Dec 65,

Corporate Author:

PHILCO BLUE BELL PA APPLIED RESEARCH LAB

Personal Author(s):

Report Date:

1965-12-31

Pagination or Media Count:

25.0

Abstract:

A model for the optical cross section of deep centers, which is superior to the hydrogenic model used for shallow centers, has been developed. Ga-doped Si appears to be a sensitive extrinsic photoconductor that can be more heavily doped than available Ge photoconductors. The characteristics of the particular Ga-doped Si examined are Na 1.2 x 10 to the 16th powercu cm, N sub D 2 x 10 to the 14th powercu cm, E sub A 0.071ev, Blip temperature 40K, Detectivity 6 x 10 to the 8th power cmcps 12watt, and tau 10 to the minus 9th power second at 40K. These results appear to justify examination of Si doped closer to the Ga solubility limit 4 x 10 to the 19th powercu cm. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE