Accession Number:

AD0631705

Title:

RADIATION EFFECTS ON (MONOLITHIC) MICROELECTRONIC CIRCUITS.

Descriptive Note:

Quarterly technical rept. no. 3, Nov 65-31 Jan 66,

Corporate Author:

HUGHES AIRCRAFT CO FULLERTON CALIF

Report Date:

1966-05-01

Pagination or Media Count:

56.0

Abstract:

Phase I was completed during the third quarter with the circuit evaluation for permanent damage as determined in the pulsed reactor tests. The results of these tests show that the RCTL circuits are more susceptible to neutron damage than the RTL and DTL circuits. This is because the manufacturers of the RCTL circuits use triple-diffused planar techniques for the transistor structure rather than the planar epitaxial techniques employed in the RTL and DTL circuits. In addition smaller geometry and gold-doping are used in the latter. RTL and DTL circuits fail at a neutron fluence above 10 to the 14th power nvt, in general, while the RCTL circuits fail at an order of magnitude lower. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE