I. FREQUENCY CONVERSION BY THE VARIABLE CAPACITANCE OF P-1-N DIODES; II. THE REPRESENTATION OF MAGNETIZATION PROCESSES BY A ROTATIONAL MODEL.
Final technical rept.
LEHIGH UNIV BETHLEHEM PA INST OF RESEARCH
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Part I describes progress in a study of the use of the charge storage properties of the p-i-n junction diode for large signal frequency conversion. Circuits with a p-i-n diode as the active element have been constructed which can perform either frequency multiplication or division in the VHF band, and operation at frequencies up to 1 GHz appears feasible. Two theoretical studies were carried out. One was an analytical treatment of the problem of the power loss associated with charge storage in the diode, assuming the major loss mechanism to be the recovery time of carriers stored in the 1-layer. The second theoretical study consisted of an analysis by digital computer of a bridge type of frequency doubling circuit. A simple charge-voltage characteristic was assumed for the diodes. Part II discusses the use of a rotational model to explain magnetization phenomena. This method of analysis is applicable to high frequency switching phenomena in magnetic materials, and is relevant to past studies of p-i-n diodes. The model yielded predictions which are in very good agreement with observed properties of magnetic materials, and it has also been found helpful in explaining complicated phenomena not readily susceptible to calculation. Author
- Electrical and Electronic Equipment
- Electricity and Magnetism
- Solid State Physics