Accession Number:

AD0631612

Title:

SEMICONDUCTOR JUNCTION PROPERTIES AS INFLUENCED BY CRYSTALLOGRAPHIC IMPERFECTIONS.

Descriptive Note:

Interim rept. 15 Feb 65-15 Feb 66,

Corporate Author:

INTERNATIONAL BUSINESS MACHINES CORP HOPEWELL JUNCTION N Y COMPONENTS DEPT

Personal Author(s):

Report Date:

1966-03-01

Pagination or Media Count:

165.0

Abstract:

Studies are reported on the influence of crystallographic imperfections on semiconductor junction performance. X-ray diffraction phenomena of junctions are correlated with device performance. Imperfections created during diffusion processes have a significant impact on devices. Precipitation is observed after gold diffusion, and the influence of this effect on the fabrication of fast switching devices is investigated. Precipitation is also shown to play a major role in the emitter dip effect evidence is presented that a faulted emitter structure can cause second breakdown. Defect distributions are correlated with electrical junction profiles, and localized diffusions are found to cause breakdown of the silicon lattice. Zinc diffusion into GaAs is found to create lattice defects x-ray junction profiles are correlated with zinc concentration profiles. Finally, dislocations and dislocation sources in web-dendrite crystals are analyzed. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE